5N20V features r ds(on) 40m @ v gs =4.5v r ds(on) 45m @ v gs =2.7v absolute maxim um ratings t a = 25 paramet er sym bol rating unit dra in-sour ce v oltage v ds 20 v gate-sour ce voltage v gs 12 v dra in-cu rre nt -continuous i d 5 a -puls ed (note 1) i dm 20 a pow er dissipati on (note 2) p d 1.5 w thermal resi st ance,junct ion- to-am bient r ja 83 /w oper ating junct ion and storage temperature ra nge tj.ts tg -55 to 150 note: 1. repe tit ive rating: pulse w idth lim ited by m ax im um junct ion tem pera ture. 2. w hen m ounted on m inim um recom m ende d footprint. tssop-8 unit: mm 1 : drain1 2 : source1 3 : source1 4 : gate1 5 : gate2 6 : source2 7 : source2 8 : drain2 d2 d1 s2 s2 g2 s1 s1 d1 smd type ic smd type smd type ic smd type product specification 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com
el ectrical characteris tics t a = 2 5 paramet er sym bol test c onditions min typ ma x unit dra in-sour ce b reakdow n voltage v dss v gs =0v,i d =1ma 20 v zero gate voltage dra in curr ent i dss v ds =18v,v gs =0v 1 a gate-body leakage i gss v gs = 12v,v ds =0v 100 na gate threshold voltage v gs(th) v ds =v gs ,,i d =250 a 0.6 v v gs =4.5v,i d =2.5a 30 40 m v gs =2.7v,i d =2.5a 37 45 m input capacitance c i ss 460 pf output capacitance c oss 200 pf rev erse transfer capa cit ance c rss 50 pf turn- on delay tim e t d(on) 7 ns rise tim e t r 33 ns turn- off delay tim e t d(off) 27 ns fall tim e t f 10 ns total gate charge q g 8.5 11.5 nc gate-s ource cha rge q gs 1.8 nc gate-d rain ch arge q gd 2.4 nc diode forw ard voltage v sd i s =5a, v gs =0 1.2 v diode forw ard cu rre nt i s 5 a v ds = 10v, i d = 4.5a ,v gs = 4.5v r ds(on) dra in- source on-state resis tance v dd =10v,i d =2.5a,v gs =4.5v, r gen =4.7 v ds = 15v, v gs = 0v, f =1.0mhz 5N20V smd type ic smd type smd type ic smd type product specification 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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